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DG411L/412L/413L
Vishay Siliconix
Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
DESCRIPTION
The DG411L/412L/413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411/412/413 with improved performance. Using BiCMOS wafer fabrication technology allows the DG411L/412L/413L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with 3 to 6 V. Combining high speed (tON: 19 ns), flat rDS(on) over the analog signal range (5 ), minimal insertion lose (- 3 dB at 280 MHz), and excellent crosstalk and off-isolation performance (- 50 dB at 50 MHz), the DG411L/412L/413L are ideally suited for audio and video signal switching. The DG411L and DG412L respond to opposite control logic as shown in the Truth Table. The DG413L has two normally open and two normally closed switches.
FEATURES
* 2.7- thru 12 V Single Supply or 3- thru 6 Dual Supply * On-Resistance - rDS(on): 17 * Fast Switching - tON: 19 ns - tOFF: 12 ns * TTL, CMOS Compatible * Low Leakage: 0.25 nA * 2000 V ESD Protection
Pb-free Available
RoHS*
COMPLIANT
BENEFITS
* * * * Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacinge
APPLICATIONS
* * * * * * * Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411L/412L Dual-In-Line, TSSOP and SOIC
IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ GND VL S3 D3 IN3 S4 D4 IN4 6 7 8 Top View 11 10 9 5 12 VL S3 D3 IN3
DG413L Dual-In-Line, TSSOP and SOIC
IN1 D1 S1 V1 2 3 4 16 15 14 13 IN2 D2 S2 V+
TRUTH TABLE
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V DG411L ON OFF DG412L OFF ON
TRUTH TABLE
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V SW1, SW4 OFF ON SW2, SW3 ON OFF
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71397 S-71241-Rev. E, 25-Jun-07 www.vishay.com 1
DG411L/412L/413L
Vishay Siliconix
ORDERING INFORMATION
Temp Range DG411L/412L DG411LDY DG411LDY-E3 DG411LDY-T1 DG411LDY-T1-E3 16-Pin Narrow SOIC DG412LDY DG412LDY-E3 DG412LDY-T1 DG412LDY-T1-E3 - 40 to 85 C DG411LDQ DG411LDQ-E3 DG411LDQ-T1 DG411LDQ-T1-E3 16-Pin TSSOP DG412LDQ DG412LDQ-E3 DG412LDQ-T1 DG412LDQ-T1-E3 DG413L DG413LDY DG413LDY-E3 DG413LDY-T1 DG413LDY-T1-E3 DG413LDQ DG413LDQ-E3 DG413LDQ-T1 DG413LDQ-T1-E3 Package Part Number
16-Pin Narrow SOIC - 40 to 85 C 16-Pin TSSOP
ABSOLUTE MAXIMUM RATINGS
Parameter V+ to VGND to VVL INa, VS, VD Continuous Current (Any Terminal) Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature (DQ, DY Suffix) (AK Suffix) 16-Pin TSSOPc Power Dissipation (Packages)
b
Limit - 0.3 to 13 7 (GND - 0.3) to (V+) + 0.3 - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first 30 100 - 65 to 125 - 65 to 150 450 650 900
Unit
V
mA C
16-Pin SOICd 16-Pin CerDIPe
mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/C above 75 C d. Derate 7.6 mW/C above 75 C e. Derate 12 mW/C above 75 C.
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Document Number: 71397 S-71241-Rev. E, 25-Jun-07
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 C Tempb Full V+ = 10.8 V, V- = 0 V IS = 10 mA, VD = 2/9 V VD = 1/11 V, VS = 11/1 V ID(off) Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off-Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitance Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IVIN = 0 or 5 V IL IGND Room Full Room Full Room Full Room Full 0.02 - 0.002 0.002 - 0.002 -1 - 7.5 -1 - 7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 A
e
D Suffix Limits - 40 to 85 C Mind 0 Maxd 12 30 40 -1 - 10 -1 - 10 -1 - 10 -1 -1 1 10 1 10 1 10 1 1 50 60 30 40 ns nA Unit V
Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance
Symbol VANALOG rDS(on) IS(off)
Typc
Mind 0
Maxd 12 30 45
Room Full Room Full Room Full Room Full Full Full Room Full Room Full Room Room Room
20 -1 - 15 -1 - 15 -1 - 15 0.01 - 1.5 - 1.5 20 12
Switch Off Leakage Current
1 15 1 15 1 15 1.5 1.5 50 70 30 48
ID(on)
VS = VD = 11/1 V
IIL IIH
VIN Under Test = 0.8 V VIN Under Test = 2.4 V
A
tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on)
RL = 300 , CL = 35 pF VS = 5 V, See Figure 2 DG413L Only, VS = 5 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 10 nF RL = 50 , CL = 5 pF , f = 1 MHz
6 5 71 95 5 6 15 pF dB pC
Room Room
f = 1 MHz
Room Room
Channel-On Capacitancee
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397 S-71241-Rev. E, 25-Jun-07
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DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY 5 V)
Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 C Tempb Full V+ = 5 V, V- = - 5 V IS = 10 mA, VD = 3.5 V V+ = 5.5 , V- = - 5.5 V VD = 4.5 V, VS = 4.5 V V+ = 5.5 V, V- = - 5.5 V VS = VD = 4.5 V VIN Under Test = 0.8 V VIN Under Test = 2.4 V Room Full Room Full Room Full Room Full 20 -1 - 15 -1 - 15 -1 - 15 Typc Mind -5 Maxd 5 33 45 1 15 1 15 1 15 -1 - 10 -1 - 10 -1 - 10 D Suffix Limits - 40 to 85 C Mind -5 Maxd 5 33 40 1 10 1 10 1 10 nA Unit V
Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg Digital Control Input Current, VIN Lowe Input Current, VIN Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione Off Isolation
e
Symbol VANALOG rDS(on) IS(off) ID(off) ID(on)
IIL IIH
Full Full Room Full Room Full Room Room Room
0.05 0.05 21 16
- 1.5 - 1.5
1.5 1.5 50 70 35 50
-1 -1
1 A 1 50 60 35 40 ns
Highe
Dynamic Characteristics tON tOFF tD Q OIRR XTALK CS(off) CD(off)
e
RL = 300 , CL = 35 pF VS = 3.5 V, See Figure 2 DG413L Only, VS = 3.5 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 10 nF RL = 50 , CL = 5 pF , f = 1 MHz
6 5 68 85 9 9 20 0.03 - 0.002 0.002 - 0.002 -1 - 7.5 -1 - 7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 A pF dB pC
Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee
Room Room
f = 1 MHz
Room Room Room Full
Channel On Capacitance Power Supplies Positive Supply Currente
CD(on)
I+ IVIN = 0 or 5 V IL IGND
Negative Supply Currente Logic Supply Currente Ground Currente
Room Full Room Full Room Full
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
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Document Number: 71397 S-71241-Rev. E, 25-Jun-07
DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 C Tempb Full V+ = 4.5 V IS = 5 mA, VD = 1 V, 3.5 V Room Full Room Hot Room Hot Room Room Room Hot VIN = 0 or 5 V Logic Supply Currente Ground Currente IL IGND Room Hot Room Hot Room Hot 35 Typc Mind Maxd 5 50 88 50 90 30 55 D Suffix Limits - 40 to 85 C Mind Maxd 5 50 75 50 60 30 40 ns Unit V
Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistancee Dynamic Characteristics Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione Power Supplies Positive Supply Currente Negative Supply Currente
Symbol VANALOG rDS(on)
tON tOFF tD Q
RL = 300 , CL = 35 pF VS = 3.5 V, See Figure 2 DG413L Only, VS = 3.5 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 10 nF
27 15
6 0.5 0.02 - 0.002 0.002 - 0.002 -1 - 7.5 -1 - 7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 A pC
I+ I-
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397 S-71241-Rev. E, 25-Jun-07
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DG411L/412L/413L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VL = 3 V, VIN = 0.4 Vf A Suffix Limits - 55 to 125 C Tempb Full V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V V+ = 3.3 , V- = 0 V VD = 1, 2 V, VS = 2, 1 V V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V VIN Under Test = 0.4 V VIN Under Test = 2.4 V Room Full Room Full Room Full Room Full Full Full Room Full Room Full Room Room Room RL = 50 , CL = 5 pF , f = 1 MHz Room Room f = 1 MHz Room Room 0.005 0.005 50 30 65 -1 - 15 -1 - 15 -1 - 15 - 1.5 - 1.5 Typc Mind 0 Maxd 3 80 115 1 15 1 15 1 15 1.5 1.5 85 150 60 100 -1 - 10 -1 - 10 -1 - 10 -1 -1 D Suffix Limits - 40 to 85 C Mind 0 Maxd 3 80 100 1 10 1 10 1 10 1 1 85 110 60 85 ns nA Unit V
Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg Digital Control Input Current, VIN Low Input Current, VIN High Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolation
e
Symbol VANALOG rDS(on) IS(off) ID(off) ID(on)
IIL IIH
A
tON tOFF tD Q OIRR XTALK CS(off) CD(off)
e
RL = 300 , CL = 35 pF VS = 1.5 V, See Figure 2 DG413L Only, VS = 1.5 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 10 nF
6 1 68 85 6 6 20 pF dB pC
Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitance
CD(on)
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 71397 S-71241-Rev. E, 25-Jun-07
DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100 50 V+ = 5 V V- = 0 V r DS(on) - On-Resistance () r DS(on) - On-Resistance () 80 VCC = 2.7 V 60 40 A B 30 C D 20 A = 125 C B = 85 C C = 25 C D = - 40 C E = - 55 C E
40
VCC = 4.5 V
20
VCC = 12 V
10
0 0 3 6 Drain Voltage (V) 9 12
0 0 1 2 3 4 5 Drain Voltage (V)
rDS(on) vs. Drain Voltage (Single Supply)
rDS(on) vs. Drain Voltage and Temperature (Single Supply)
0.30
35 V = 5 V r DS(on) - On-Resistance () 28 Supply Current (nA)
0.25
V+ = 5 V V- = 0 V
0.20
21
0.15
14 A = 125 C B = 85 C C = 25 C D = - 40 C E = - 55 C -5 -3 -1 1 3 5
0.10
7
0.05
0 Drain Voltage (V)
0.00 - 50
- 25
0
25
50
75
100
125
150
Temperature (C)
rDS(on) vs. Drain Voltage and Temperature (Dual Supply)
30 V+ = 5 V V- = - 5 V 40 10 ID(on) 0 IS(off) ID(off) Switching Speed (nS) 50
Supply Current vs. Temperature
I S , I D Leakage Current (pA)
20
tON 30
20
- 10
tOFF
- 20
10
- 30 -5 -3 -1 1 3 5
0 0 3 6 9 12 15 VD or V S - Drain-Source Voltage
V+ - Positive Supply Voltage (V)
Leakage Current vs. Analog Voltage (Dual Supply)
Switching Time vs. Single Supply
Document Number: 71397 S-71241-Rev. E, 25-Jun-07
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DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
45 6
36 Switching Speed (nS) 4 27 tOFF tON Charge Injection (Q) VSUPPLY = 5 V 2 VSUPPLY = 3 V 0
18
9
0 2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-2 -5
-3
-1
1
3
5
V Positive Supply Voltage (V)
Drain Voltage (V)
Switching Time vs. Dual Supply
1.8 7 6 5 4 3 2 0.3 1 0 0 2 4 6 8 10 12 14 0
Charge Injection vs. Drain Voltage
1.5 V TH - Threshold (V)
CD(off) at VCC = 5 V CD(off) at VCC = 12 V CD(off) at VCC = 3 V
1.2
0.9
0.6
0.0 V Positive Supply Voltage (V)
Capacitance (pF)
3
6 VD - Drain Voltage (V)
9
12
Input Threshold vs. Single Supply Voltage
Drain Capacitance vs. Drain Voltage (Single Supply)
10
25 VSUPPLY = 5 V 20 Capacitance (pF) CD(on)
- 10
- 30 15 Loss (dB)
V+ = 3 V V- = 0 V RL = 50
Insertion Loss - 3 dB = 280 MHz
- 50
Off Isolation
10 - 70 CS/CD(off) 5 - 90 0 -5 Crosstalk
- 110 -3 -1 1 3 5 0.1 1 10 Frequency (MHz) 100 1000 Analog Voltage (V)
Capacitance vs. Analog Signal (Dual Supply)
Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply) Document Number: 71397 S-71241-Rev. E, 25-Jun-07
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DG411L/412L/413L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL VVIN Level Shift/ Drive V+ GND D V-
Figure 1.
TEST CIRCUITS
VL V+ 3V 50% 0V VL VS S IN GND VRL 300 CL 35 pF Switch Output Switch Input* 0V tON VO - VS 90 % V+ D VO Switch Input* VS VO tON tr < 20 ns tf < 20 ns
Logic Input
90 %
VCL (includes fixture and stray capacitance) VO = V S RL RL + rDS(on)
Note:
Logic input waveform is inverted for switches that have the opposite logic sense control
Figure 2. Switching Time
VL
V+ Logic Input 3V 50 % 0V VS1 VO1 Switch Output 0V VS2 VO2 0V
VS1 VS2
S1 IN1 S2 IN2 GND V-
D1 D2 VO2
VO1
90 %
RL1 300 RL2 300 CL2 35 pF
CL1 35 pF Switch Output
90 %
tD
tD
VCL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413L)
Document Number: 71397 S-71241-Rev. E, 25-Jun-07
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DG411L/412L/413L
Vishay Siliconix
TEST CIRCUITS
VL V+ VO Rg VL S IN 3V GND VINX VV+ D CL 10 nF OFF ON Q = VO x CL OFF VO INX OFF ON OFF VO
Vg
INX dependent on switch configuration Input polarity determined by sense of switch.
Figure 4. Charge Injection
VL C VL VS Rg = 50 0 V, 2.4 V S2 NC 0 V, 2.4 V IN2 GND VS VO VVC RL D2 VO S1 IN1 C V+ D1 50 V+
XTALK Isolation = 20 log C = RF bypass
Figure 5. Crosstalk
VL C VL VS Rg = 50 0 V, 2.4 V IN RL 50 IN GND VC 0 V, 2.4 V D VOff Isolation = 20 log C = RF Bypass VS VO VGND VC S
V+ V+
C C D VO
VL
V+
C VL
V+
S Meter HP4192A Impedance Analyzer or Equivalent
Figure 6. Off-Isolation
Figure 7. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71397.
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Document Number: 71397 S-71241-Rev. E, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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